ne851m03 nec's npn silicon transistor ? new miniature m03 package: C small transistor outline C low pro?le / 0.59 mm package height C flat lead style for better rf performance ? ideal for 3 ghz oscillators ? low 1/f noise ? low pushing factor features outline dimensions (units in mm) package outline m03 part number ne851m03 eiaj 1 registered number 2sc5800 package outline m03 symbols parameters and conditions units min typ max f t gain bandwidth at v ce = 1 v, i c = 5 ma, f = 2 ghz ghz 3.0 4.5 C f t gain bandwidth at v ce = 1 v, i c = 15 ma, f = 2 ghz ghz 5.0 6.5 |s 21e | 2 insertion power gain at v ce = 1 v, i c = 5 ma, f = 2 ghz db 3.0 4.0 C |s 21e | 2 insertion power gain at v ce = 1 v, i c = 15 ma, f = 2 ghz db 4.5 5.5 C nf noise figure at v ce = 1 v, i c = 10 ma, f = 2 ghz, zs = z opt db C 1.9 2.5 c re reverse transfer capacitance 3 at v cb = 0.5 v, i e = 0 ma, f = 1 mhz pf C 0.6 0.8 i cbo collector cutoff current at v cb = 5 v, i e = 0 na C C 600 i ebo emitter cutoff current at v eb = 1 v, i c = 0 na C C 600 h fe dc current gain 2 at v ce = 1 v, i c = 5 ma 100 120 145 electrical characteristics (t a = 25c) notes: 1. electronic industrial association of japan. 2. pulsed measurement, pulse width 350 s, duty cycle 2 %. 3. collector to base capacitance when the emitter is grounded description nec's ne851m03 transistor is designed for oscillator appli - cations up to 3 ghz. the ne851m03 features low voltage operation, low phase noise, and high immunty to pushing ef - fects. nec's low pro?le/?at lead style "m03" package is ideal for today's portable wireless applications. 1 3 2 1.20.05 0.80.1 +0.1 -0.05 +0.1 -0 +0.1 -0 0.15 1.4 0.1 (0.9) 0.590.05 0.2 0.45 0.45 0.3 80 1. emitter 2. base 3. collector pin connections california eastern laboratories
notes: 1. operation in excess of any one of these parameters may result in permanent damage. 2. with device mounted on 1.08 cm 2 x 1.0 mm (t) glass epoxy board. symbols parameters units ratings v cbo collector to base voltage v 9.0 v ceo collector to emitter voltage v 5.5 v ebo emitter to base voltage v 1.5 i c collector current ma 100 p t 2 total power dissipation mw 200 t j junction temperature c 150 t stg storage temperature c -65 to +150 absolute maximum ratings 1 (t a = 25c) ambient temperature, t a (c) total power dissipation, p tot (mw) total power dissipation vs. ambient temperature typical performance curves (t a = 25c) collector to base voltage, v cb (v) reverse transfer capacitance, c re (pf) reverse transfr capacitance vs. collector to base voltage ne851m03 base to emitter voltage, v be (v) collector current, i c (ma) collector current vs. base to emitter voltage part number quantity NE851M03-T1-a 3 k pcs./reel ordering information collector current, i c (ma) collector to emitter voltage, v ce (v) collector current vs. collector to emitter voltage 300 250 200 150 100 50 0 25 50 7 5 100 125 150 mounted on glass epoxy pcb (1.08 cm 2 x 1.0 mm(t) ) f = 1 mhz 1.0 0.8 0.6 0.4 0.2 0 1 2 3 4 5 6 7 8 9 v ce = 1 v 100 80 60 40 20 0 0.2 0.4 0.6 0.8 1.0 60 30 40 50 10 20 0 1 2 3 4 5 6 7 i b = 40 a 320 a 280 a 240 a 200 a 160 a 120 a 80 a 360 a 400 a
typical performance curves (t a = 25c) ne851m03 collector current, i c (ma) gain bandwidth product, f t (ghz) gain bandwidth product vs. collector current gain bandwidth product, f t (ghz) collector current, i c (ma) gain bandwidth product vs. collector current frequency, f (ghz) insertion power gain, |s 21e | 2 (db) insertion power gain vs. frequency frequency, f (ghz) insertion power gain, |s 21e | 2 (db) insertion power gain vs. frequency insertion power gain vs. frequency frequency, f (ghz) insertion power gain, |s 21e | 2 (db) insertion power gain vs. frequency frequency, f (ghz) insertion power gain, |s 21e | 2 (db) v ce = 1 v f = 2 ghz 10 8 6 4 2 0 10 1 100 v ce = 2 v f = 2 ghz 10 8 6 4 2 0 10 1 100 v ce = 1 v i c = 5 m a 35 20 25 30 5 10 15 0 0.1 1 1 0 v ce = 2 v i c = 5 m a 35 20 25 30 5 10 15 0 0.1 1 1 0 v ce = 1 v i c = 15 m a 35 20 25 30 5 10 15 0 0.1 1 1 0 v ce = 2 v i c = 15 m a 35 20 25 30 5 10 15 0 0.1 1 1 0
ne851m03 typical performance curves (t a = 25c) collector current, i c (ma) insertion power gain, |s 21e | 2 (db) maximum available gain, mag(db) maximum stable gain, msg(db) insertion power gain, mag, msg vs. collector current collector current, i c (ma) insertion power gain, |s 21e | 2 (db) maximum available gain, mag(db) maximum stable gain, msg(db) insertion power gain, mag, msg vs. collector current collector current, i c (ma) insertion power gain, |s 21e | 2 (db) maximum available gain, mag(db) insertion power gain and mag vs. collector current collector current, i c (ma) insertion power gain, |s 21e | 2 (db) maximum available gain, mag(db) insertion power gain and mag vs. collector current collector current, i c (ma) insertion power gain, |s 21e | 2 (db) maximum available gain, mag(db) maximum stable gain, msg(db) insertion power gain, mag, msg vs. collector current collector current, i c (ma) insertion power gain, |s 21e | 2 (db) maximum stable gain, msg(db) insertion power gain, msg vs. collector current v ce = 1 v f = 1 ghz 20 15 5 10 0 1 1 0 100 ma g ms g |s 21e | 2 v ce = 2 v f = 1 ghz 20 15 5 10 0 1 1 0 100 ma g ms g |s 21e | 2 v ce = 1 v f = 2 ghz 15 10 0 5 -5 1 1 0 100 mag |s 21e | 2 v ce = 2 v f = 2 ghz 15 10 0 5 -5 1 1 0 100 ma g |s 21e | 2 v ce = 1 v f = 4 ghz 10 5 -5 0 -10 1 1 0 100 ma g ms g |s 21e | 2 v ce = 2 v f = 4 ghz 10 5 -5 0 -10 1 1 0 100 ms g |s 21e | 2
typical performance curves (t a = 25c) ne851m03 collector current, i c (ma) noise figure, nf (db) noise figure and associated gain vs. collector current associated gain, g a (db) noise figure, nf (db) collector current, i c (ma) noise figure and associated gain vs. collector current associated gain, g a (db) collector current, i c (ma) noise figure, nf (db) noise figure and associated gain vs. collector current associated gain, g a (db) noise figure, nf (db) collector current, i c (ma) noise figure and associated gain vs. collector current associated gain, g a (db) input power, p in (dbm) output power, p out (dbm) output power and collector current vs. input power collector current, i c (ma) input power, p in (dbm) output power, p out (dbm) output power and collector current vs. input power collector current, i c (ma) 4 3 2 1 0 16 12 8 4 0 1 1 0 100 v ce = 1 v f = 1 ghz nf g a 4 3 2 1 0 16 12 8 4 0 1 1 0 100 v ce = 2 v f = 1 ghz nf g a 4 3 2 1 0 18 12 8 4 0 1 1 0 100 v ce = 1 v f = 2 ghz nf g a 4 3 2 1 0 18 12 8 4 0 1 1 0 100 v ce = 2 v f = 2 ghz nf g a 25 20 15 10 5 0 -5 -10 -15 -15 -10 -5 0 5 10 -20 80 70 60 50 40 p out i c 30 20 10 0 v ce = 2 v, f = 1 ghz i cq = 5 ma (rf off) 25 20 15 10 5 0 -5 -10 -15 -15 -10 -5 0 5 10 -20 80 70 60 50 40 p out i c 30 20 10 0 v ce = 2 v, f = 2 ghz i cq = 5 ma (rf off)
ne851m03 typical scattering parameters (t a = 25c) frequency s 11 s 21 s 12 s 22 k mag 1 ghz mag ang mag ang mag ang mag ang (db) ne851m03 v c = 1 v, i c = 5 ma 0.100 0.824 -46.13 13.999 152.23 0.033 66.48 0.903 -21.08 0.089 26.32 0.200 0.748 -80.11 11.531 131.89 0.051 52.70 0.745 -34.82 0.187 23.51 0.300 0.705 -104.73 9.279 118.04 0.062 43.78 0.620 -42.24 0.283 21.75 0.400 0.679 -121.76 7.580 108.36 0.067 39.96 0.537 -46.40 0.368 20.54 0.500 0.673 -141.72 6.194 98.80 0.068 35.59 0.410 -53.91 0.510 19.57 0.700 0.666 -155.88 4.587 89.15 0.072 37.14 0.356 -57.66 0.677 18.03 1.000 0.664 -168.35 3.313 78.69 0.078 43.34 0.331 -62.07 0.872 16.26 1.100 0.665 -171.53 3.030 75.69 0.081 45.75 0.327 -64.09 0.924 15.75 1.200 0.664 -174.29 2.794 72.95 0.083 48.31 0.325 -65.91 0.976 15.26 1.300 0.665 -176.88 2.593 70.20 0.086 51.04 0.326 -68.31 1.010 14.15 1.400 0.664 -179.25 2.424 67.64 0.090 53.34 0.329 -70.20 1.039 13.11 1.500 0.665 178.52 2.274 65.18 0.094 55.84 0.332 -72.21 1.056 12.40 1.600 0.666 176.60 2.145 62.84 0.098 58.31 0.335 -74.41 1.065 11.82 1.700 0.666 174.50 2.029 60.56 0.103 60.46 0.340 -76.60 1.071 11.31 1.800 0.666 172.69 1.928 58.37 0.109 62.48 0.345 -78.64 1.066 10.91 1.900 0.666 170.70 1.835 56.25 0.115 64.26 0.351 -80.85 1.064 10.49 2.000 0.666 169.07 1.754 54.18 0.121 66.01 0.356 -83.15 1.056 10.17 2.100 0.667 167.34 1.677 52.01 0.128 67.42 0.362 -85.49 1.039 9.96 2.200 0.667 165.53 1.610 50.17 0.135 68.65 0.370 -87.59 1.021 9.87 2.300 0.667 163.82 1.548 48.31 0.143 69.81 0.377 -89.58 1.004 9.96 2.400 0.668 162.04 1.491 46.50 0.152 70.84 0.383 -91.66 0.983 9.93 2.500 0.669 160.31 1.440 44.69 0.160 71.44 0.391 -93.66 0.959 9.53 2.600 0.669 158.48 1.391 42.95 0.169 72.05 0.397 -95.62 0.944 9.15 2.700 0.670 156.71 1.347 41.25 0.179 72.44 0.405 -97.78 0.920 8.77 2.800 0.669 154.91 1.305 39.67 0.189 72.75 0.412 -99.60 0.903 8.39 2.900 0.669 152.89 1.265 38.08 0.199 72.87 0.420 -101.42 0.888 8.03 3.000 0.671 151.05 1.228 36.56 0.209 72.79 0.427 -103.43 0.868 7.68 3.500 0.670 141.05 1.075 29.73 0.266 71.32 0.463 -112.30 0.808 6.07 4.000 0.672 130.96 0.959 24.15 0.326 67.81 0.493 -121.04 0.775 4.69 4.500 0.671 120.95 0.870 19.76 0.387 62.94 0.518 -130.14 0.778 3.52 5.000 0.673 111.68 0.802 16.38 0.445 57.33 0.538 -139.86 0.798 2.56 5.500 0.675 103.60 0.752 13.83 0.498 51.29 0.553 -150.11 0.830 1.79 6.000 0.680 96.09 0.718 11.88 0.545 45.24 0.563 -160.44 0.865 1.19 note: 1. gain calculations: m ag = |s 21 | |s 12 | k - 1 ). 2 ( k = s 11 s 22 - s 21 s 12 when k 1, mag is undefined and msg values are used. msg = |s 21 | |s 12 | , k = 1 + | | - |s 11 | - |s 22 | 2 2 2 2 | s 12 s 21 | , mag = maximum available gain msg = maximum stable gain j50 j25 j10 0 10 25 -j10 -j25 -j50 -j100 j100 0 50 100 0 s22 s11 0.100 to 6.000 ghz by 0.100 +90 ? +45 ? +135 ? +180 ? 1 8 6 4 2 -135 ? -90 ? -45 ? 0? s12 s21 0.100 to 6.000 ghz by 0.100
ne851m03 typical scattering parameters (t a = 25c) frequency s 11 s 21 s 12 s 22 k mag 1 ghz mag ang mag ang mag ang mag ang (db) ne851m03 v c = 2 v, i c = 10 ma 0.100 0.695 -61.64 23.158 144.21 0.026 61.44 0.821 -29.68 0.183 29.48 0.200 0.624 -100.58 17.024 122.63 0.038 50.73 0.610 -44.71 0.335 26.51 0.300 0.595 -123.61 12.782 110.30 0.044 47.67 0.480 -51.39 0.469 24.63 0.400 0.582 -137.95 10.071 102.30 0.049 47.72 0.405 -54.57 0.583 23.13 0.500 0.609 -154.61 8.021 95.02 0.052 47.72 0.289 -65.42 0.727 21.91 0.700 0.608 -165.54 5.858 87.23 0.060 52.69 0.245 -68.86 0.876 19.91 1.000 0.608 -175.12 4.192 78.55 0.075 59.31 0.226 -72.02 0.984 17.48 1.100 0.610 -177.63 3.830 76.03 0.080 61.10 0.223 -73.72 1.005 16.36 1.200 0.609 -179.89 3.528 73.70 0.086 62.79 0.221 -75.21 1.026 15.15 1.300 0.608 178.01 3.271 71.35 0.091 64.04 0.223 -77.34 1.039 14.33 1.400 0.608 176.04 3.057 69.13 0.097 65.34 0.226 -78.57 1.044 13.69 1.500 0.608 174.19 2.866 66.99 0.104 66.51 0.229 -80.20 1.045 13.12 1.600 0.609 172.64 2.703 64.95 0.110 67.27 0.232 -81.76 1.043 12.63 1.700 0.609 170.81 2.556 62.92 0.117 68.13 0.237 -83.43 1.040 12.18 1.800 0.608 169.29 2.429 60.94 0.124 68.82 0.241 -85.04 1.033 11.81 1.900 0.607 167.57 2.313 59.01 0.131 69.46 0.247 -86.60 1.027 11.45 2.000 0.606 166.16 2.211 57.16 0.138 70.00 0.252 -88.61 1.023 11.11 2.100 0.607 164.68 2.115 55.16 0.146 70.12 0.258 -90.25 1.011 10.96 2.200 0.606 163.12 2.031 53.46 0.154 70.56 0.266 -91.95 0.999 11.21 2.300 0.605 161.63 1.954 51.71 0.162 70.80 0.271 -93.42 0.990 10.82 2.400 0.606 160.05 1.884 50.01 0.170 70.94 0.278 -94.93 0.979 10.45 2.500 0.606 158.52 1.821 48.31 0.178 70.87 0.285 -96.56 0.966 10.10 2.600 0.605 156.89 1.760 46.64 0.186 70.86 0.291 -98.07 0.957 9.75 2.700 0.606 155.28 1.706 44.97 0.196 70.87 0.299 -99.75 0.941 9.41 2.800 0.604 153.71 1.654 43.40 0.205 70.66 0.306 -101.10 0.931 9.08 2.900 0.603 151.89 1.605 41.82 0.214 70.49 0.314 -102.50 0.922 8.76 3.000 0.604 150.23 1.561 40.28 0.223 69.98 0.321 -104.02 0.907 8.45 3.500 0.602 141.17 1.375 33.08 0.272 68.05 0.357 -111.13 0.862 7.04 4.000 0.604 131.89 1.233 26.63 0.323 64.75 0.391 -118.23 0.823 5.81 4.500 0.607 122.66 1.119 20.91 0.376 60.65 0.421 -126.11 0.805 4.73 5.000 0.614 114.03 1.026 15.94 0.428 55.85 0.448 -134.94 0.799 3.80 5.500 0.625 106.41 0.949 11.68 0.477 50.70 0.471 -144.72 0.805 2.99 6.000 0.638 99.10 0.887 8.19 0.523 45.37 0.489 -154.78 0.821 2.30 note: 1. gain calculations: m ag = |s 21 | |s 12 | k - 1 ). 2 ( k = s 11 s 22 - s 21 s 12 when k 1, mag is undefined and msg values are used. msg = |s 21 | |s 12 | , k = 1 + | | - |s 11 | - |s 22 | 2 2 2 2 | s 12 s 21 | , mag = maximum available gain msg = maximum stable gain j50 j25 j10 0 10 25 -j10 -j25 -j50 -j100 j100 0 50 100 0 s22 s11 0.100 to 6.000 ghz b y 0.10 0 +90 ? +45 ? +135 ? +180 ? 1 8 6 4 2 -135 ? -90 ? -45 ? 0? s12 s21 0.100 to 6.000 ghz by 0.100
ne851m03 typical scattering parameters (t a = 25c) a business partner of nec co m p ound semiconductor devices, ltd . 09/02/2003 note: 1. gain calculations: m ag = |s 21 | |s 12 | k - 1 ). 2 ( k ? = s 11 s 22 - s 21 s 12 when k 1, mag is undefined and msg values are used. msg = |s 21 | |s 12 | , k = 1 + | ? | - |s 11 | - |s 22 | 2 2 2 2 | s 12 s 21 | , mag = maximum available gain msg = maximum stable gain frequency s 11 s 21 s 12 s 22 k mag 1 ghz mag ang mag ang mag ang mag ang (db) ne851m03 v c = 3 v, i c = 20 ma 0.100 0.555 -83.93 33.100 134.57 0.020 59.16 0.705 -40.19 0.304 32.17 0.200 0.525 -123.08 21.477 114.01 0.028 53.63 0.469 -55.38 0.529 28.79 0.300 0.519 -141.74 15.332 103.82 0.035 55.51 0.355 -61.29 0.680 26.43 0.400 0.518 -152.59 11.824 97.41 0.040 58.95 0.295 -63.99 0.790 24.68 0.500 0.570 -165.20 9.286 91.94 0.045 60.56 0.203 -82.72 0.896 23.15 0.700 0.572 -173.28 6.730 85.52 0.058 64.80 0.170 -87.94 0.977 20.68 1.000 0.573 179.45 4.793 78.07 0.078 68.73 0.156 -90.92 1.020 17.03 1.100 0.574 177.46 4.376 75.85 0.085 69.69 0.154 -92.65 1.024 16.18 1.200 0.573 175.59 4.030 73.81 0.092 70.12 0.153 -93.73 1.032 15.34 1.300 0.573 173.85 3.736 71.72 0.099 70.66 0.156 -95.63 1.033 14.66 1.400 0.572 172.20 3.490 69.72 0.106 71.00 0.159 -96.09 1.031 14.09 1.500 0.572 170.60 3.272 67.80 0.113 71.20 0.162 -97.01 1.030 13.54 1.600 0.571 169.35 3.086 65.92 0.121 71.30 0.164 -97.84 1.027 13.07 1.700 0.571 167.72 2.918 64.09 0.129 71.48 0.169 -98.85 1.022 12.65 1.800 0.570 166.42 2.772 62.29 0.136 71.38 0.173 -99.61 1.018 12.28 1.900 0.568 164.85 2.641 60.52 0.144 71.29 0.177 -100.52 1.015 11.89 2.000 0.567 163.64 2.524 58.79 0.152 71.21 0.182 -101.75 1.010 11.61 2.100 0.566 162.32 2.415 56.94 0.160 71.07 0.188 -102.94 1.004 11.40 2.200 0.566 160.87 2.321 55.35 0.167 70.95 0.194 -103.84 0.997 11.42 2.300 0.564 159.57 2.233 53.71 0.176 70.63 0.200 -104.57 0.990 11.04 2.400 0.564 158.12 2.155 52.12 0.184 70.33 0.205 -105.29 0.982 10.69 2.500 0.563 156.71 2.082 50.51 0.192 69.89 0.212 -106.25 0.974 10.35 2.600 0.562 155.22 2.013 48.91 0.200 69.69 0.218 -107.15 0.968 10.02 2.700 0.562 153.77 1.953 47.33 0.209 69.30 0.225 -108.26 0.958 9.70 2.800 0.559 152.31 1.895 45.82 0.218 68.85 0.231 -108.94 0.952 9.39 2.900 0.558 150.61 1.840 44.30 0.227 68.41 0.238 -109.85 0.946 9.10 3.000 0.558 149.11 1.791 42.79 0.235 67.76 0.245 -110.73 0.937 8.82 3.500 0.554 140.64 1.583 35.66 0.280 65.12 0.280 -115.50 0.903 7.52 4.000 0.555 132.00 1.426 29.06 0.327 61.75 0.313 -120.66 0.870 6.39 4.500 0.558 123.35 1.300 22.97 0.374 57.82 0.345 -127.21 0.850 5.41 5.000 0.567 115.32 1.196 17.43 0.421 53.51 0.374 -134.94 0.834 4.54 5.500 0.581 108.18 1.109 12.40 0.465 48.92 0.400 -143.93 0.826 3.77 6.000 0.599 101.26 1.034 7.97 0.507 44.18 0.423 -153.49 0.828 3.09 life support applications these nec products are not intended for use in life support devices, appliances, or systems where the malfunction of these prod ucts can reasonably be expected to result in personal injury. the customers of cel using or selling these products for use in such applications do so at their own risk and agree to fully indemnify cel for all damages resulting from such improper use or sale. j50 j25 j10 0 10 25 -j10 -j25 -j50 -j100 j100 0 50 100 0 s22 s11 0.100 to 6.000 ghz b y 0.100 +90 ? +45 ? +135 ? +180 ? 1 8 6 4 2 -135 ? -90 ? -45 ? 0? s12 s21 0.100 to 6.000 ghz by 0.100
3-238 a business partner of nec co m p ound semiconductor devices, ltd . 09/02/2003 life support applications these nec products are not intended for use in life support devices, appliances, or systems where the malfunction of these prod ucts can reasonably be expected to result in personal injury. the customers of cel using or selling these products for use in such applications do so at their own risk and agree to fully indemnify cel for all damages resulting from such improper use or sale. schematic model test conditions frequency: 0.1 to 6.0 ghz bias: v ce = 1.5 v, i c = 1 ma to 9 ma date: 09/2003 parameters q1 parameters q1 is 734.5e-18 mjc 0.122 bf 166.6 xcjc 0.1 nf 1.00 cjs 0 vaf 41 vjs 0.75 ikf 0.597 mjs 0 ise 39.37e-15 fc 0.5 ne 2.258 tf 13e-12 br 28.67 xtf 0.39 nr 1.000 vtf 0.668 var 2.541 itf 0.06 ikr 23.22e-3 ptf 20 isc 27.52e-18 tr 0 nc 2.0 eg 1.11 re 1.7 xtb 0 rb 3.0 xti 3 rbm 1.0 kf* 0 irb 759e-6 af* 1 rc 4.0 cje 2.51e-12 vje 0.887 mje 0.332 cjc 498.2e-15 vjc 0.367 (1) gummel-poon model bjt nonlinear model parameters (1) base emitter collecto r l bpkg 0.6 nh l b 0.004 nh l epkg 0.65 nh l e 0.004 nh l cpkg 0.7 nh c cbpkg 0.15 pf c cb 0.04 pf c ce 0.28 pf c cepkg 0.08 pf c bepkg 0.005 pf q 1 i c = 5 ma i c = 10 ma i c = 15 ma af 1.40 2.551 2.626 kf 4.547e-15 855.6e-12 1.735e-9 af and kf are 1/f noise parameters and are bias dependent. the appropriate values for the 1/f noise parameters (af and kf) shall be chosen from the table below, according to the desired current range. parameters ne851m03 c cb 0.04 pf c ce 0.28 pf l b 0.004 nh l e 0.004 nh c cbpkg 0.15 pf c cepkg 0.08 pf c bepkg 0.005 pf l bpkg 0.6 nh l cpkg 0.7 nh l epkg 0.65 nh additional parameters for a better understanding on af and kf parameters, please refer to an1026. ne851m03 nonlinear model
3-239 4590 patrick henry drive santa clara, ca 95054-1817 telephone: (408 ) 9 19-250 0 facsimile : ( 40 8 ) 988-0279 subject: compliance with eu directives cel certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of european union (eu) directive 2002/95/ec restriction on use of hazardous substance s i n electrical and electronic equipment (rohs) and the requirements of eu directive 2003/11/ec restriction on penta and octa bde. cel pb-free products have the same base part number with a suffix added. the suffix Ca indicates that the device is pb-free. the Caz suffix is used to designate devices containing pb which are exempted from the requirement of rohs directive (*). in all cases the devices have pb-free terminals. all devices with these suffixes meet the requirements of the rohs directive. this status is based on cels understanding of the eu directives and knowledge of the materials that go into its products as of the date of disclosure of this information . restricted substanc e per rohs concentration limit per rohs (values are not yet fixed) concentration contained in cel devices -a -a z lead (p b) < 1000 ppm not detected (*) mercury < 1000 ppm not detected cadmiu m < 100 ppm not detected hexavalent chromiu m < 1000 ppm not detected pbb < 1000 ppm not detected pbde < 1000 ppm not detected if you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. important information and disclaimer: informatio n p rovided by ce l o n its website or in other communications concertin g the substan ce content of its products represents knowledge and belief as of the date that it is provided. cel bases its know ledge and belief on informatio n provided by thir d p arties and makes no representation or warrant y as to the accura cy of such information. efforts are underw ay to better integrate information from third parties. cel has taken and continues to take reasonable steps to provide representative and ac curate information but ma y not have conducted destructive testing or chemical analysis on incoming ma terials and chemicals. cel and ce l suppliers consider certain information to be propri etar y, and thus cas numbers and other limited information may not be availabl e for release . in no event shall cels liability arising out of such information exceed the total purchase price of the cel part(s) at issue s old by cel to customer on an annual basis. see cel terms and conditions for additional clarification of wa rranties and liabilit y.
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